Spin bottleneck in resonance tunneling through In 0.04Ga 0.96As/GaAs Vertical double quantum dots

S. M. Huang*, Y. Tokura, H. Akimoto, K. Kono, Juhn-Jong Lin, S. Tarucha, K. Ono

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots.

原文English
主出版物標題Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
頁面735-736
頁數2
DOIs
出版狀態Published - 1 十二月 2011
事件30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
持續時間: 25 七月 201030 七月 2010

出版系列

名字AIP Conference Proceedings
1399
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
國家Korea, Republic of
城市Seoul
期間25/07/1030/07/10

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