Space-charge-limited current conductions in La 2O 3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing

Yongshik Kim*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Lantham oxide (La 2O 3) was deposited by E-beam evaporation on n-Si(100), and annealed at 200°C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (Space- Charge-Limited Current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap composed of both exponential and localized distributions was extracted by using of the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V result.

原文English
主出版物標題ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
編輯R.P. Mertens, C.L. Claeys
頁面81-84
頁數4
出版狀態Published - 2004
事件ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium
持續時間: 21 九月 200423 九月 2004

出版系列

名字ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Conference

ConferenceESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
國家Belgium
城市Leuven
期間21/09/0423/09/04

指紋 深入研究「Space-charge-limited current conductions in La <sub>2</sub>O <sub>3</sub> thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing」主題。共同形成了獨特的指紋。

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