SONOS-type flash memory using an HfO2as a charge trapping layer deposited by the sol-gel spin-coating method

Hsin Chiang You*, Tze Hsiang Hsu, Fu-Hsiang Ko, Jiang Wen Huang, Wen Luh Yang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

75 引文 斯高帕斯(Scopus)

摘要

In this letter, the authors fabricate the silicon-oxide-nitride-oxide- silicon (SONOS)-like memory using an HfO2as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900°C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-V g, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105.

原文English
頁(從 - 到)653-655
頁數3
期刊IEEE Electron Device Letters
27
發行號8
DOIs
出版狀態Published - 1 八月 2006

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