SiON/Ta2O5 stacked gate dielectric exhibits 3-5 orders smaller leakage current than SiO2 at 1.8 nm, while the transistor characteristics such as mobility, Id-Vg, and Id-Vd, are similar to those of SiO2 transistor. N-channel MOSFET with equivalent SiO2 thickness down to 1.8 nm (1.4 nm equivalent due to elimination of poly-Si depletion) is demonstrated. Process effects are also studied for optimum process condition.
|頁（從 - 到）||381-384|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 1998|
|事件||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
持續時間: 6 十二月 1998 → 9 十二月 1998