Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

Ming Long Fan, Shao Yu Yang, Vita Pi Ho Hu, Yin Nien Chen, Pin Su*, Ching Te Chuang

*Corresponding author for this work

研究成果: Article › 同行評審

14 引文 斯高帕斯（Scopus）

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Chemical Compounds

Engineering & Materials Science

Physics & Astronomy