Simulation study of type-II Ge/Si quantum dot for solar cell applications

Weiguo Hu, Mohammad Maksudur Rahman, Ming Yi Lee, Yiming Li, Seiji Samukawa

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application.

原文English
文章編號124509
期刊Journal of Applied Physics
114
發行號12
DOIs
出版狀態Published - 17 十月 2013

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