Simulation of SOI devices and circuits using BSIM3SOI

Dennis Sinitsky*, Stephen Tang, Arun Jangity, Fariborz Assaderaghi, Ghavam Shahidi, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L eff below 0.2 μm.

原文English
頁(從 - 到)323-325
頁數3
期刊IEEE Electron Device Letters
19
發行號9
DOIs
出版狀態Published - 1 九月 1998

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