@inproceedings{9d64b18de0de442eba9a696ed31653f6,
title = "Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits",
abstract = "A PMOSFET hot-carrier degradation model has been incorporated into the reliability simulator BERT-CAS, enabling prediction of dynamic circuit-level degradation in which both PMOSFET and NMOSFET degradation play a major role. Comparisons are presented which reveal the good fit obtained between measurement and simulation results.",
author = "Lee, {P. M.} and T. Garfinkel and Ko, {P. K.} and Chen-Ming Hu",
year = "1991",
month = jan,
day = "1",
doi = "10.1109/VTSA.1991.246684",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "191--195",
booktitle = "1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991",
address = "United States",
note = "null ; Conference date: 22-05-1991 Through 24-05-1991",
}