Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits

P. M. Lee; T. Garfinkel; P. K. Ko; Chen-Ming Hu

doi:10.1109/VTSA.1991.246684

Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits

P. M. Lee, T. Garfinkel, P. K. Ko, Chen-Ming Hu

國際半導體產業學院

研究成果: Conference contribution › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A PMOSFET hot-carrier degradation model has been incorporated into the reliability simulator BERT-CAS, enabling prediction of dynamic circuit-level degradation in which both PMOSFET and NMOSFET degradation play a major role. Comparisons are presented which reveal the good fit obtained between measurement and simulation results.

原文	English
主出版物標題	1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	191-195
頁數	5
ISBN（電子）	078030036X, 9780780300361
DOIs	https://doi.org/10.1109/VTSA.1991.246684
出版狀態	Published - 1 一月 1991
事件	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan 持續時間: 22 五月 1991 → 24 五月 1991

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN（列印）	1930-8868

Conference

Conference	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
國家	Taiwan
城市	Taipei
期間	22/05/91 → 24/05/91

存取文件

10.1109/VTSA.1991.246684

Link to publication in Scopus

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引用此

Lee, P. M., Garfinkel, T., Ko, P. K., & Hu, C-M. (1991). Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits. 於 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 (頁 191-195). [246684] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1991.246684

Lee, P. M. ; Garfinkel, T. ; Ko, P. K. ; Hu, Chen-Ming. / Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits. 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. 頁 191-195 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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abstract = "A PMOSFET hot-carrier degradation model has been incorporated into the reliability simulator BERT-CAS, enabling prediction of dynamic circuit-level degradation in which both PMOSFET and NMOSFET degradation play a major role. Comparisons are presented which reveal the good fit obtained between measurement and simulation results.",

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Lee, PM, Garfinkel, T, Ko, PK & Hu, C-M 1991, Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits. 於 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991., 246684, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 191-195, 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991, Taipei, Taiwan, 22/05/91. https://doi.org/10.1109/VTSA.1991.246684

Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits. / Lee, P. M.; Garfinkel, T.; Ko, P. K.; Hu, Chen-Ming.

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 191-195 246684 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

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Lee PM, Garfinkel T, Ko PK, Hu C-M. Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuits. 於 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 191-195. 246684. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.1991.246684