Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs

Chien Shao Tang, Shao Ming Yu, Hong Mu Chou, Jam Wem Lee, Yi-Ming Li*

*Corresponding author for this work

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.

原文English
主出版物標題2004 4th IEEE Conference on Nanotechnology
頁面281-283
頁數3
DOIs
出版狀態Published - 16 八月 2004
事件2004 4th IEEE Conference on Nanotechnology - Munich, Germany
持續時間: 16 八月 200419 八月 2004

出版系列

名字2004 4th IEEE Conference on Nanotechnology

Conference

Conference2004 4th IEEE Conference on Nanotechnology
國家Germany
城市Munich
期間16/08/0419/08/04

指紋 深入研究「Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs」主題。共同形成了獨特的指紋。

引用此