SIMS depth profiling of advanced gate dielectric materials

J. Bennett*, C. Gondran, C. Sparks, P. Y. Hung, Tuo-Hung Hou

*Corresponding author for this work

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

Depth profiling of thin gate dielectric films was studied. For SiON films profiled with 300 eV Cs + at ∼75° roughening was not observed at 3 nm, but depth scale discrepancies suggest that roughening-induced sputter rate variations are present. Profiles of ZrO 2 and HfO 2 films sputtered with Cs show a unique behavior of sputter-induced roughness going through a maximum in the Si under the oxide film. This roughness influences the Cs concentration, which in turn affects the ion yields. Profiling the ZrO 2 and HfO 2 films with O 2 + appears to be compromised by the presence of radiation-enhanced diffusion that leads to large decay lengths of the Zr + or Hf + signals.

原文English
頁(從 - 到)409-413
頁數5
期刊Applied Surface Science
203-204
DOIs
出版狀態Published - 15 一月 2003

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