Silicon layer stacking enabled by wafer bonding

Chuan Seng Tan*, Kuan-Neng Chen, Andy Fan, Anantha Chandrakasan, Rafael Reif

*Corresponding author for this work

研究成果: Conference contribution同行評審

12 引文 斯高帕斯(Scopus)

摘要

Three-dimensional integrated circuits (3-D ICs), in the form of a vertical stack of several interconnected device layers, have many performance, form factor, and integration advantages. The main objective of this work is to develop reliable process technology to enable the fabrication of a vertically interconnected silicon multi-layer stack. Low temperature wafer bonding processes, both copper thermo-compression bonding and silicon dioxide fusion bonding, are studied extensively as key enabling technology. Cu thermocompression bonding is studied for its feasibility as a permanent bond between active layers in a multi-layer stack. Silicon dioxide wafer bonding, on the other hand, is used as a temporary bond to attach a donor wafer to a handle wafer during donor wafer thinning and subsequent layer transfer. Sufficiently high bond strength is obtained with careful surface preparation and activation prior to bonding. Silicon layer can be stacked either in a "face down" or "face up" orientation. Using a combination of wafer bonding and thinning, double-layer stacks in both orientations are fabricated. By repeating these steps on two "face down" double-layer stacks, a four-layer stack is successful demonstrated.

原文English
主出版物標題Enabling Technologies for 3-D Integration
頁面193-204
頁數12
DOIs
出版狀態Published - 29 六月 2007
事件2006 MRS Fall Meeting - Boston, MA, United States
持續時間: 27 十一月 20061 十二月 2006

出版系列

名字Materials Research Society Symposium Proceedings
970
ISSN(列印)0272-9172

Conference

Conference2006 MRS Fall Meeting
國家United States
城市Boston, MA
期間27/11/061/12/06

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