Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs

Jam Wem Lee, Yi-Ming Li*

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The thickness effect of silicon-germanium structure for surrounding-gate strained silicon nanowire field-effect transistors (FET) was investigated using 3D nanodevice simulator. It was found that the radius of the silicon-germanium (R SiGe increased the driving current and did not change the transfer characteristics. It was also found that the larger silicon-germanium radius implied higher drain current due to a higher stress caused from the thinner silicon film. The results show that the sample FET obtains a higher driving current without significantly changing the threshold voltage and on/off current ratio.

原文English
主出版物標題2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
頁面161-162
頁數2
DOIs
出版狀態Published - 十月 2004
事件2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
持續時間: 24 十月 200427 十月 2004

出版系列

名字2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Conference

Conference2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
國家United States
城市West Lafayette, IN
期間24/10/0427/10/04

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