Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

Shuo Wei Chen, Young Yang, Wei Chih Wen, Heng Li, Tien-chang Lu*

*Corresponding author for this work

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XX
編輯Heonsu Jeon, Li-Wei Tu, Martin Strassburg, Michael R. Krames
發行者SPIE
ISBN(電子)9781510600034
DOIs
出版狀態Published - 1 一月 2016
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - San Francisco, United States
持續時間: 15 二月 201617 二月 2016

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9768
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
國家United States
城市San Francisco
期間15/02/1617/02/16

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