Si nanowire technology

Hiroshi Iwai*

*Corresponding author for this work

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

Recently, CMOS downsizing has been accelerated very aggressively in both production and research levels. However, it is still questionable if we can successfully introduce deep sub-10 nm CMOS LSIs into market, due to performance concerns - such as Ion/Ioff ratio, current drive, variation in the electrical characteristics, concerns for the yield, reliability and manufacturing cost. We have conducted nano-CMOS studies in advance to provide possible solutions to the future expected problems. Si Nanowire FETs have been found to have very promising characteristics with high Ion/Ioff ratio and high drive current which could give them a strong foothold in the near future device structures.

原文English
主出版物標題Dielectric Materials and Metals for Nanoelectronics and Photonics 10
頁面251-260
頁數10
版本4
DOIs
出版狀態Published - 2012
事件Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
持續時間: 7 十月 201212 十月 2012

出版系列

名字ECS Transactions
號碼4
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
國家United States
城市Honolulu, HI
期間7/10/1212/10/12

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