Short-channel metal-gate TFTs with modified Schottky-barrier source/drain

Chih Feng Huang*, Bing-Yue Tsui

*Corresponding author for this work

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A thin active layer, a fully silicided source/drain (S/D), a modified Schottky-barrier, a high dielectric constant (high-κ) gate dielectric, and a metal gate are integrated to realize high-performance thin-film transistors (TFTs). Devices with 0.1-μm gate length were fabricated successfully. Low threshold voltage, low subthreshold swing, high transconductance, low S/D resistance, high on/off current ratio, and negligible threshold voltage rolloff are demonstrated. It is thus suggested for the first time that the short-channel modified Schottky-barrier TFT is a solution to carrier out three-dimension integrated circuits and system-on-panel.

原文English
頁(從 - 到)43-45
頁數3
期刊IEEE Electron Device Letters
27
發行號1
DOIs
出版狀態Published - 1 一月 2006

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