Shallow states of donor impurity at the surface of isotropic semicondoctors

Tsin-Fu Jiang, Yueh Shan

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.

原文English
頁(從 - 到)3399-3406
頁數8
期刊Journal of Physics C: Solid State Physics
18
發行號17
DOIs
出版狀態Published - 20 六月 1985

指紋 深入研究「Shallow states of donor impurity at the surface of isotropic semicondoctors」主題。共同形成了獨特的指紋。

引用此