Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP

J. F. Chen*, Jyh-Cheng Chen, Y. S. Lee, Y. W. Choi, K. Xie, P. L. Liu, W. A. Anderson, C. R. Wie

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Zn-doped GaxIn1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E V+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.

原文English
頁(從 - 到)3711-3716
頁數6
期刊Journal of Applied Physics
67
發行號8
DOIs
出版狀態Published - 1 十二月 1990

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