Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation

Chiung Hui Lai; Kow-Ming Chang; Chu Feng Chen; Cheng Ting Hsieh; Chin Ning Wu; Yu Bin Wang; Chung Hsien Liu; Kuo Chin Chang

doi:10.1049/mnl.2012.0214

Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation

Chiung Hui Lai^*, Kow-Ming Chang, Chu Feng Chen, Cheng Ting Hsieh, Chin Ning Wu, Yu Bin Wang, Chung Hsien Liu, Kuo Chin Chang

^*Corresponding author for this work

電子工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO₂ layer deposited on a Si_0.8Ge _0.2 nanowire improved its sensitivity by ∼1.3 times that of the nanowire sample without a top passivation layer.

原文	English
頁（從 - 到）	729-732
頁數	4
期刊	Micro and Nano Letters
卷	7
發行號	8
DOIs	https://doi.org/10.1049/mnl.2012.0214
出版狀態	Published - 1 八月 2012

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10.1049/mnl.2012.0214

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AU - Hsieh, Cheng Ting

AU - Wu, Chin Ning

AU - Wang, Yu Bin

AU - Liu, Chung Hsien

AU - Chang, Kuo Chin

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