Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current

Shun-Tung Yen*, Chien Ping Lee

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Quantum well semiconductor lasers with a novel cladding design to achieve small output beam divergence and low threshold current, simultaneously are discussed. Cladding structures that cause expansion in the optical mode, while maintaining a good confinement factor, are reviewed. The design criteria and compromises are discussed in detail. The new structures offer much improved beam divergence along with low threshold current compared with conventional graded-index separate confinement heterostructure (GRINSCH) lasers. An optimized structure with the new cladding design can yield a far-field angle as low as 14.6° and a low threshold current density of 180 A cm-2.

原文English
頁(從 - 到)1229-1238
頁數10
期刊Optical and Quantum Electronics
28
發行號10
DOIs
出版狀態Published - 1 一月 1996

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