Self-heating induced feedback effect on drain current mismatch and its modeling

Jack J.Y. Kuo; Pin Su

doi:10.1109/IEDM.2011.6131496

Self-heating induced feedback effect on drain current mismatch and its modeling

Jack J.Y. Kuo^*, Pin Su

^*Corresponding author for this work

電子工程學系

研究成果: Conference contribution › 同行評審

摘要

We have reported and modeled a self-heating induced feedback effect on the drain current mismatch of nanoscale MOSFETs. The accuracy of the new model has been verified with experimental data. This effect needs to be considered when one-to-one comparisons between SOI and bulk devices regarding the variability are made.

原文	English
主出版物標題	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131496
出版狀態	Published - 1 十二月 2011
事件	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States 持續時間: 5 十二月 2011 → 7 十二月 2011

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
國家	United States
城市	Washington, DC
期間	5/12/11 → 7/12/11

存取文件

10.1109/IEDM.2011.6131496

Link to publication in Scopus

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引用此

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abstract = "We have reported and modeled a self-heating induced feedback effect on the drain current mismatch of nanoscale MOSFETs. The accuracy of the new model has been verified with experimental data. This effect needs to be considered when one-to-one comparisons between SOI and bulk devices regarding the variability are made.",

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Kuo, JJY & Su, P 2011, Self-heating induced feedback effect on drain current mismatch and its modeling. 於 2011 International Electron Devices Meeting, IEDM 2011., 6131496, Technical Digest - International Electron Devices Meeting, IEDM, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131496

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