Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin*, Samuel K.H. Fung, Weidong Liu, Philip C.H. Chan, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

55 引文 斯高帕斯(Scopus)

摘要

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

原文English
頁(從 - 到)175-178
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 1999
事件1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
持續時間: 5 十二月 19998 十二月 1999

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