A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.
|頁（從 - 到）||175-178|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 1999|
|事件||1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA|
持續時間: 5 十二月 1999 → 8 十二月 1999