We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
|出版狀態||Published - 8 六月 2014|
|事件||2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States|
持續時間: 8 六月 2014 → 13 六月 2014
|Conference||2014 Conference on Lasers and Electro-Optics, CLEO 2014|
|期間||8/06/14 → 13/06/14|