Self-aligned shallow trench isolation recess effect on cell performance and reliability of 42nm NAND flash memory

C. H. Liu, Y. M. Lin, Riichiro Shirota, H. C. Wei, L. T. Kuo, C. Han Liu, S. H. Chen, H. P. Hwang, Y. Sakamoto, S. Pittikoun

研究成果: Conference contribution

摘要

Self-aligned shallow trench isolation recess effect on 42nm node NAND flash to achieve high performance and good reliability has been studied and demonstrated. As cell STI recess is increased by 23nm, 29% narrower cell Vth distribution width and 54% less cell Vth shift after 125°C, 2 hours can be obtained. Furthermore, the endurance window is obviously improved ∼0.5V as the distance of the active area edge to control gate (CG) is increased at the same time. Deeper STI recess and enough active area edge to CG distance are a promising profile for floating gate based NAND flash at 42nm node and beyond.

原文English
主出版物標題Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
頁面46-47
頁數2
DOIs
出版狀態Published - 20 十月 2010
事件2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
持續時間: 26 四月 201028 四月 2010

出版系列

名字Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
國家Taiwan
城市Hsin Chu
期間26/04/1028/04/10

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  • 引用此

    Liu, C. H., Lin, Y. M., Shirota, R., Wei, H. C., Kuo, L. T., Liu, C. H., Chen, S. H., Hwang, H. P., Sakamoto, Y., & Pittikoun, S. (2010). Self-aligned shallow trench isolation recess effect on cell performance and reliability of 42nm NAND flash memory. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (頁 46-47). [5488956] (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488956