Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device with 5.5-nm Hf_0.8Zr_0.2O₂, High Endurance and Breakdown Recovery

We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf_0.8Zr_0.2O₂ (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-on-insulator wafers, and the ferroelectric is deposited with atomic layer deposition. The reported devices have an ON/OFF drain current ratio of up to 10⁶, a read endurance of >10^{10} read cycles, and a program/erase endurance of 10⁷ cycles. Furthermore, healing of the transistor after gate insulator breakdown is demonstrated.