Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Xingui Zhang*, Huaxin Guo, Hau Yu Lin, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Guang Li Luo, Chun-Yen Chang, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Phyllis Shi Ya Lim, Yee Chia Yeo

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.

原文English
文章編號032209
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
29
發行號3
DOIs
出版狀態Published - 1 一月 2011

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