Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu Hung Chen, Min Cheng Chen, Hung Min Chen, Chuan Feng Shih, Shih Hsiung Wu, Yi Ying Ho, Yu Sheng Lai, Shou Ji Chen, Kent Liu, Bo Yuan Chen, Dong Yen Lai, Chang Hsien Lin, Chia Yi Lin, Fu Kuo Hsueh, Chi Ming Wu, Cho Lun Hsu, Wen Cheng Chiu, Chun Chi Chen, Andy Liu, Ching Tai HsuCheng San Wu, Mei Yi Lee, Tong Huan Chou, Jie Yi Yao, Yi Ling Shen, Qiong Zi Hsu, Kun Lin Lin, Chien Ting Wu, Mei Ling Kuo, Chi Hui Yang, Wen Fa Wu, Chiahua Ho, Chen-Ming Hu, Fu Liang Yang

研究成果: Conference contribution同行評審

摘要

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

原文English
主出版物標題2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
出版狀態Published - 12 八月 2013
事件2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
持續時間: 22 四月 201324 四月 2013

出版系列

名字2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
國家Taiwan
城市Hsinchu
期間22/04/1324/04/13

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