Scaling effects on gate leakage current

Watanabe Hiroshi*, Kazuya Matsuzawa, Shin Ichi Takagi

*Corresponding author for this work

研究成果: Article

15 引文 斯高帕斯(Scopus)

摘要

Scaling effects on direct tunneling gate leakage current are analyzed by utilizing new models implemented to perform self-consistent calculation between the direct tunneling, the band-gap narrowing (BGN) and the incomplete impurity ionization. This calculation is indispensable for reproducing the measured gate current-gate voltage characteristics in the device simulation. As a result, it is concluded that the scaling of the gate width cannot suppress the gate leak, even if the specification of the threshold voltage is relaxed in order to shrink the gate width. It is also found that the scaling of the gate length cannot suppress the gate leak unless the vertical field is strong.

原文English
頁(從 - 到)1779-1784
頁數6
期刊IEEE Transactions on Electron Devices
50
發行號8
DOIs
出版狀態Published - 1 八月 2003

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