Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs

N. C. Chen*, P. Y. Wang, Jenn-Fang Chen

*Corresponding author for this work

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16 引文 斯高帕斯(Scopus)

摘要

The sample considered herein is an annealed low-temperature (LT) molecular beam epitaxially grown GaAs of n-LT-i-p structure with the LT layer grown at 300°C. Characteristics involving the dominant trap level located at about 0.66 eV below the conduction band are obtained by analyzing the data of the admittance spectroscopy, capacitance-voltage, current-voltage, and frequency-dependent conductance experiments. This trap pins the fermi level of the LT layer and makes the LT layer semi-insulating. In this structure, the level interacts with both the conduction band and the valence band with a hole emission time constant characterized by an activation energy of 0.77 eV and a cross section of 1.1×10-13 cm2. This level is also an effective generation-recombination center when the temperature exceeds 300 K.

原文English
頁(從 - 到)1403-1409
頁數7
期刊Journal of Applied Physics
83
發行號3
DOIs
出版狀態Published - 1 二月 1998

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