RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics

Albert Chin, S. B. Chen, K. T. Chan, J. C. Hsieh, M. H. Chang, C. C. Lin, J. Liu, K. M. Chen

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we have characterized the RF performance of high-k Al2O3 and AlTiOx capacitors and compared with SiO2. We have found that significant k reduction occurs in high-k dielectric and SiO2 at high frequencies and is strong material dependent. This may be a limitation of high-k dielectric. The relatively large shot noise in gate dielectric is strongly dependent on material and sensitive to defect generation after stress.

原文English
主出版物標題Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001
發行者Institute of Electrical and Electronics Engineers Inc.
頁面62-63
頁數2
ISBN(電子)4891140216, 9784891140212
DOIs
出版狀態Published - 1 一月 2001
事件International Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
持續時間: 1 十一月 20012 十一月 2001

出版系列

名字Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2001
國家Japan
城市Tokyo
期間1/11/012/11/01

指紋 深入研究「RF performance limitation of high-k AlTiO<sub>x</sub> and Al<sub>2</sub>O<sub>3</sub> gate dielectrics」主題。共同形成了獨特的指紋。

  • 引用此

    Chin, A., Chen, S. B., Chan, K. T., Hsieh, J. C., Chang, M. H., Lin, C. C., Liu, J., & Chen, K. M. (2001). RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics. 於 Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 (頁 62-63). [967548] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2001.967548