RF performance improvement of metamorphic high-electron mobility transistor using (InxGa1-xAs)m(InAs)n superlattice-channel structure for millimeter-wave applications

Chien I. Kuo*, Heng-Tung Hsu, Yu Lin Chen, Chien Ying Wu, Edward Yi Chang, Yasuyuki Miyamoto, Wen Chung Tsern, Kartik Chandra Sahoo

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)m(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular InxGa1-xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (InxGa1-xAs) m(InAs)n channel layer. When biased at 1.2 V, the current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure (NFmin) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.

原文English
文章編號5471190
頁(從 - 到)677-679
頁數3
期刊IEEE Electron Device Letters
31
發行號7
DOIs
出版狀態Published - 1 七月 2010

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