RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation

Albert Chin*, K. T. Chan, C. H. Huang, C. Chen, V. Liang, J. K. Chen, S. C. Chien, S. W. Sun, D. S. Duh, W. J. Lin, Chunxiang Zhu, M. F. Li, S. P. McAlister, Dim Lee Kwong

*Corresponding author for this work

研究成果: Conference article同行評審

40 引文 斯高帕斯(Scopus)

摘要

High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.

原文English
頁(從 - 到)375-378
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 2003
事件IEEE International Electron Devices Meeting - Washington, DC, United States
持續時間: 8 十二月 200310 十二月 2003

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