High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
|頁（從 - 到）||375-378|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 2003|
|事件||IEEE International Electron Devices Meeting - Washington, DC, United States|
持續時間: 8 十二月 2003 → 10 十二月 2003