We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.
|頁（從 - 到）||477-480|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 1 一月 2002|
|事件||2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States|
持續時間: 2 六月 2002 → 7 六月 2002