RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

Hyunchol Shin*, Zhiwei Xu, Mau-Chung Chang

*Corresponding author for this work

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

原文English
頁(從 - 到)477-480
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
1
DOIs
出版狀態Published - 1 一月 2002
事件2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
持續時間: 2 六月 20027 六月 2002

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