RF CMOS characteristics have been traditionally regarded as poorer than those of Si-bipolar and compound devices. However, recent aggressive downsizing of CMOS devices has improved its RF characteristics significantly and some of them have already exceeded some of Si-bipolar and GaAs transistors. In near future. RF front-end and base band chips could merge into one chip. In this paper, current status and future prospects of advanced RF CMOS technology are described, especially with comparison to SiGe BiCMOS RF technologies.