RF CMOS technology

Hiroshi Iwai*

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

RF CMOS characteristics have been traditionally regarded as poorer than those of Si-bipolar and compound devices. However, recent aggressive downsizing of CMOS devices has improved its RF characteristics significantly and some of them have already exceeded some of Si-bipolar and GaAs transistors. In near future. RF front-end and base band chips could merge into one chip. In this paper, current status and future prospects of advanced RF CMOS technology are described, especially with comparison to SiGe BiCMOS RF technologies.

原文English
主出版物標題2004 Asia-Pacific Radio Science Conference - Proceedings
編輯T. Keyun, L. Dayong
頁面296-298
頁數3
出版狀態Published - 2004
事件2004 Asia-Pacific Radio Science Conference - Qingdao, China
持續時間: 24 八月 200427 八月 2004

出版系列

名字2004 Asia-Pacific Radio Science Conference - Proceedings

Conference

Conference2004 Asia-Pacific Radio Science Conference
國家China
城市Qingdao
期間24/08/0427/08/04

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