Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique

C. C. Hung, Horng-Chih Lin, H. C. Shih*

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The response surface methodology (RSM) has been used in this study to investigate the effect of various control factors on the performance of silicon trench etch in high-density transformer coupled plasma (TCP) on Cl2/HBr/O2-based chemistry. The TCP source power, bias power, and Cl2 content of the Cl2/HBr mixture were the process variables. The etch rate and sidewall profile angle were employed as the response items for RSM analysis. Quantitative relationships between etching characteristics and process parameters have been established. The possible mechanisms are also proposed to explain the different sidewall profile angles as varying the parameters.

原文English
頁(從 - 到)791-795
頁數5
期刊Solid-State Electronics
46
發行號6
DOIs
出版狀態Published - 1 六月 2002

指紋 深入研究「Response surface methodology applied to silicon trench etching in Cl<sub>2</sub>/HBr/O<sub>2</sub> using transformer coupled plasma technique」主題。共同形成了獨特的指紋。

引用此