Resonant tunnel magnetoresistance in a double magnetic tunnel junction

Artur Useinov, N. K. Useinov*, L. R. Tagirov, J. Kosel

*Corresponding author for this work

研究成果: Article同行評審

摘要

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.

原文English
頁(從 - 到)2573-2576
頁數4
期刊Journal of Superconductivity and Novel Magnetism
25
發行號8
DOIs
出版狀態Published - 1 十二月 2012

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