Resistive switching properties of sol-gel derived Mo-doped SrZrO 3 thin films

Chih Yang Lin, Chun Chieh Lin, Chun Hsing Huang, Chen Hsi Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

研究成果: Article

22 引文 斯高帕斯(Scopus)

摘要

Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4  s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

原文English
頁(從 - 到)1319-1322
頁數4
期刊Surface and Coatings Technology
202
發行號4-7
DOIs
出版狀態Published - 15 十二月 2007

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