Resistive Switching Non-volatile Memory Feasible for 28nm and beyond Embedded Logic CMOS Technology

Steve S. Chung*

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Current bottleneck to the development of advanced 28nm and beyond nonvolatile memory is limited by the further scaling of existing flash memory, e.g., floating gate and SONOS, as a result of the scaling limit of the tunnel oxide as well as the retention issue. On the other hand, there is a strong demand to develop a memory cell which is compatible with the advanced logic HKMG CMOS generations for the embedded applications. In this talk, we will provide a solution on how to develop a replacement of FG and SONOS memories based on the resistive switching. This switching nonvolatile memory, named 1T NVM, comprises a simple MIM structure on the top of the transistor gate while the readout is taken from the transistor V th or I d , similar to that of flash memory. A bilayer MIM is preferable for quality performance. Experimental results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path, forming issues in conventional crossbar ReRAM. The architecture of this basic NVM is especially useful for the embedded design in high-k metal-gate logic CMOS with 28nm and beyond. It has great potential for both NOR and NAND memory applications.

原文English
主出版物標題2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
編輯Ting-Ao Tang, Fan Ye, Yu-Long Jiang
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538644409
DOIs
出版狀態Published - 5 十二月 2018
事件14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
持續時間: 31 十月 20183 十一月 2018

出版系列

名字2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
國家China
城市Qingdao
期間31/10/183/11/18

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