Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

Pragyey Kumar Kaushik; Sankalp Kumar Singh; Ankur Gupta; Ananjan Basu; Edward Yi Chang

doi:10.1109/SNW50361.2020.9131661

Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

Pragyey Kumar Kaushik^*, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang

^*Corresponding author for this work

研究成果: Conference contribution › 同行評審

摘要

In this work, we introduce a resistive approach to extract various device performance parameters such as contact resistance, mobility and effective gate length. Without passivation of the un-gated region, HEMT device leads to forming of an extra gate length either side of gate called virtual gate length (dLG). Carrier mobility (µC) of 2DEG and dLG also depends upon VGS (gate bias). The depleted channel also reduces the device current causing a significant increase in source/drain resistance (RS/RD).

原文	English
主出版物標題	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	117-118
頁數	2
ISBN（電子）	9781728197357
DOIs	https://doi.org/10.1109/SNW50361.2020.9131661
出版狀態	Published - 六月 2020
事件	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States 持續時間: 13 六月 2020 → 14 六月 2020

出版系列

名字	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
國家	United States
城市	Honolulu
期間	13/06/20 → 14/06/20

存取文件

10.1109/SNW50361.2020.9131661

指紋深入研究「Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT」主題。共同形成了獨特的指紋。

引用此

Kaushik, P. K., Singh, S. K., Gupta, A., Basu, A., & Chang, E. Y. (2020). Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT. 於 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 (頁 117-118). [9131661] (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW50361.2020.9131661

Kaushik, Pragyey Kumar ; Singh, Sankalp Kumar ; Gupta, Ankur ; Basu, Ananjan ; Chang, Edward Yi. / Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT. 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 頁 117-118 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

@inproceedings{c4ca36b5c35d4b76915eae9635997171,

title = "Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT",

abstract = "In this work, we introduce a resistive approach to extract various device performance parameters such as contact resistance, mobility and effective gate length. Without passivation of the un-gated region, HEMT device leads to forming of an extra gate length either side of gate called virtual gate length (dLG). Carrier mobility (µC) of 2DEG and dLG also depends upon VGS (gate bias). The depleted channel also reduces the device current causing a significant increase in source/drain resistance (RS/RD).",

keywords = "high electron mobility transistor, parameter extraction, two-dimensional electron gas, Virtual gate",

author = "Kaushik, {Pragyey Kumar} and Singh, {Sankalp Kumar} and Ankur Gupta and Ananjan Basu and Chang, {Edward Yi}",

year = "2020",

month = jun,

doi = "10.1109/SNW50361.2020.9131661",

language = "English",

series = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "117--118",

booktitle = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

address = "United States",

note = "null ; Conference date: 13-06-2020 Through 14-06-2020",

}

Kaushik, PK, Singh, SK, Gupta, A, Basu, A & Chang, EY 2020, Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT. 於 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020., 9131661, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Institute of Electrical and Electronics Engineers Inc., 頁 117-118, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Honolulu, United States, 13/06/20. https://doi.org/10.1109/SNW50361.2020.9131661

Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT. / Kaushik, Pragyey Kumar; Singh, Sankalp Kumar; Gupta, Ankur; Basu, Ananjan; Chang, Edward Yi.

2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 117-118 9131661 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

AU - Kaushik, Pragyey Kumar

AU - Singh, Sankalp Kumar

AU - Gupta, Ankur

AU - Basu, Ananjan

AU - Chang, Edward Yi

PY - 2020/6

Y1 - 2020/6

N2 - In this work, we introduce a resistive approach to extract various device performance parameters such as contact resistance, mobility and effective gate length. Without passivation of the un-gated region, HEMT device leads to forming of an extra gate length either side of gate called virtual gate length (dLG). Carrier mobility (µC) of 2DEG and dLG also depends upon VGS (gate bias). The depleted channel also reduces the device current causing a significant increase in source/drain resistance (RS/RD).

AB - In this work, we introduce a resistive approach to extract various device performance parameters such as contact resistance, mobility and effective gate length. Without passivation of the un-gated region, HEMT device leads to forming of an extra gate length either side of gate called virtual gate length (dLG). Carrier mobility (µC) of 2DEG and dLG also depends upon VGS (gate bias). The depleted channel also reduces the device current causing a significant increase in source/drain resistance (RS/RD).

KW - high electron mobility transistor

KW - parameter extraction

KW - two-dimensional electron gas

KW - Virtual gate

UR - http://www.scopus.com/inward/record.url?scp=85092141118&partnerID=8YFLogxK

U2 - 10.1109/SNW50361.2020.9131661

DO - 10.1109/SNW50361.2020.9131661

M3 - Conference contribution

AN - SCOPUS:85092141118

T3 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

SP - 117

EP - 118

BT - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 13 June 2020 through 14 June 2020

ER -

Kaushik PK, Singh SK, Gupta A, Basu A, Chang EY. Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT. 於 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 117-118. 9131661. (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). https://doi.org/10.1109/SNW50361.2020.9131661