Renovation of power devices by GaN-based materials

Daisuke Ueda*

*Corresponding author for this work

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.

原文English
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面16.4.1-16.4.4
ISBN(電子)9781467398930
DOIs
出版狀態Published - 16 二月 2015
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
持續時間: 7 十二月 20159 十二月 2015

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
國家United States
城市Washington
期間7/12/159/12/15

指紋 深入研究「Renovation of power devices by GaN-based materials」主題。共同形成了獨特的指紋。

引用此