Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Chen Wei Shih, Albert Chin*, Chun Fu Lu, Wei Fang Su

*Corresponding author for this work

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

原文English
文章編號19023
期刊Scientific reports
6
DOIs
出版狀態Published - 8 一月 2016

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