Reliability study on tri-gate nanowires poly-Si TFTs under DC and AC hot-carrier stress

Yung Chun Wu*, Hung Bin Chen, Li Wei Feng, Ting Chang Chang, Po-Tsun Liu, Chun Yen Chang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

This work studies reliability after dc and ac hot-carrier stress of polysilicon thin-film transistors (poly-Si TFTs) with single-channel and ten-nanowire channels, respectively. For single-channel (Sl) poly-Si TFT, the device characteristics degradation under ac hot-carrier stress is severer than dc stress. In addition, the Vth and SS variation increases with the frequency increasing from 1 K Hz to 1 MHz. On the contrary, for tennanowire channels (M10) tri-gate poly-Si TFT, the Vth and SS variation is much lower than the Sl TFT with different stressing frequency. These results indicate that the M10 TFT has less deep state generation after dc and ac stress. Because the MlO TFT has more effective NH3 plasma passivation than that of S1 TFT due to the ten split nanowire channels has wide NH3 plasma passivation area. Moreover, M10 TFT has robust tri-gate control can reduce the lateral electrical field and its penetration from the drain to reduce hot-carrier effect. In ac stress study, the device degradation is dependent on the pulse falling time rather than rising time. In temperature study, the device degradation is improved as the operation temperature increasing from 25°C to 75°C.

原文English
主出版物標題2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
頁面763-768
頁數6
DOIs
出版狀態Published - 八月 2007
事件2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
持續時間: 2 八月 20075 八月 2007

出版系列

名字2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
國家China
城市Hong Kong
期間2/08/075/08/07

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