Reliability study on BST capacitors for GaAs MMIC

Atsushi Noma*, Daisuke Ueda

*Corresponding author for this work

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Reliability of BST (Ba 0.7 Sr 0.3 TiO 3 ) capacitors made by using a MOD technique was studied in terms of TDDB. DLTS analysis revealed peak-shift toward the lower-temperature side as the degradation goes further. Obtained energy level of interfacial states at grain boundaries was 0.75eV. We found the capture cross section of the level increases after the bias-temperature stress. We also found that the larger grain size of BST film gives longer lifetime. These results suggest that the reliability is to be determined by the interface of grains.

原文English
頁(從 - 到)69-78
頁數10
期刊Integrated Ferroelectrics
15
發行號1-4
DOIs
出版狀態Published - 1 一月 1997

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