Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Chung Ming Chu; Yueh Chin Lin; Wei-I Lee; Chang Fu Dee; Yuen Yee Wong; Burhanuddin Yeop Majlis; Muhamad Mat Salleh; Seong Ling Yap; Edward Yi Chang

doi:10.7567/APEX.9.021203

Reliability study of high-κ La₂O₃/HfO₂ and HfO₂/La₂O₃ stacking layers on n-In_0.53Ga_0.47As metal-oxide-semiconductor capacitor

Chung Ming Chu, Yueh Chin Lin, Wei-I Lee, Chang Fu Dee, Yuen Yee Wong, Burhanuddin Yeop Majlis, Muhamad Mat Salleh, Seong Ling Yap, Edward Yi Chang

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

This study investigates the time-dependent dielectric breakdown (TDDB) characteristics of La₂O₃/HfO₂ and HfO₂/La₂O₃ stacking layers on an n-In_0.53Ga_0.47As metal-oxide-semiconductor capacitor. Both designs improved the reliability compared with a single layer of HfO₂. The TDDB followed the thermochemical E model. The current transportation mechanism changed from thermionic emission to Frenkel-Poole emission because of the traps creation under voltage stress. Both designs resulted in similar lifespans and voltage accelerating factors. However, the La₂O₃/HfO₂ design had a longer lifespan because of the lower interface trap density and insertion of the HfO₂ diffusion barrier layer between La₂O₃ and n-In_0.53Ga_0.47As. The oxide stacks exhibited excellent reliability and achieved a lifespan of 28.4 years.

原文	English
文章編號	021203
期刊	Applied Physics Express
卷	9
發行號	2
DOIs	https://doi.org/10.7567/APEX.9.021203
出版狀態	Published - 1 二月 2016

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10.7567/APEX.9.021203

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title = "Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor",

abstract = "This study investigates the time-dependent dielectric breakdown (TDDB) characteristics of La2O3/HfO2 and HfO2/La2O3 stacking layers on an n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Both designs improved the reliability compared with a single layer of HfO2. The TDDB followed the thermochemical E model. The current transportation mechanism changed from thermionic emission to Frenkel-Poole emission because of the traps creation under voltage stress. Both designs resulted in similar lifespans and voltage accelerating factors. However, the La2O3/HfO2 design had a longer lifespan because of the lower interface trap density and insertion of the HfO2 diffusion barrier layer between La2O3 and n-In0.53Ga0.47As. The oxide stacks exhibited excellent reliability and achieved a lifespan of 28.4 years.",

author = "Chu, {Chung Ming} and Lin, {Yueh Chin} and Wei-I Lee and Dee, {Chang Fu} and Wong, {Yuen Yee} and Majlis, {Burhanuddin Yeop} and Salleh, {Muhamad Mat} and Yap, {Seong Ling} and Chang, {Edward Yi}",

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Reliability study of high-κ La₂O₃/HfO₂ and HfO₂/La₂O₃ stacking layers on n-In_0.53Ga_0.47As metal-oxide-semiconductor capacitor. / Chu, Chung Ming; Lin, Yueh Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi.

於: Applied Physics Express, 卷 9, 編號 2, 021203, 01.02.2016.

研究成果: Article › 同行評審

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T1 - Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

AU - Chu, Chung Ming

AU - Lin, Yueh Chin

AU - Lee, Wei-I

AU - Dee, Chang Fu

AU - Wong, Yuen Yee

AU - Majlis, Burhanuddin Yeop

AU - Salleh, Muhamad Mat

AU - Yap, Seong Ling

AU - Chang, Edward Yi

PY - 2016/2/1

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