Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Chung Ming Chu, Yueh Chin Lin, Wei-I Lee, Chang Fu Dee, Yuen Yee Wong, Burhanuddin Yeop Majlis, Muhamad Mat Salleh, Seong Ling Yap, Edward Yi Chang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This study investigates the time-dependent dielectric breakdown (TDDB) characteristics of La2O3/HfO2 and HfO2/La2O3 stacking layers on an n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Both designs improved the reliability compared with a single layer of HfO2. The TDDB followed the thermochemical E model. The current transportation mechanism changed from thermionic emission to Frenkel-Poole emission because of the traps creation under voltage stress. Both designs resulted in similar lifespans and voltage accelerating factors. However, the La2O3/HfO2 design had a longer lifespan because of the lower interface trap density and insertion of the HfO2 diffusion barrier layer between La2O3 and n-In0.53Ga0.47As. The oxide stacks exhibited excellent reliability and achieved a lifespan of 28.4 years.

原文English
文章編號021203
期刊Applied Physics Express
9
發行號2
DOIs
出版狀態Published - 1 二月 2016

指紋 深入研究「Reliability study of high-κ La<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> and HfO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacking layers on n-In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor capacitor」主題。共同形成了獨特的指紋。

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