Reliability simulator for interconnect and intermetallic contact electromigration

B. K. Liew*, P. Fang, N. W. Cheung, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article

12 引文 斯高帕斯(Scopus)


A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.

頁(從 - 到)111-118
期刊Annual Proceedings - Reliability Physics (Symposium)
出版狀態Published - 1 十二月 1990
事件Twenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
持續時間: 27 三月 199029 三月 1990

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