Reliability mechanisms of LTPS-TFT with HfO 2 gate dielectric: PBTI, NBTI, and hot-carrier stress

Ming Wen Ma*, Chi Yang Chen, Woei Cheng Wu, Chun Jung Su, Kuo Hsing Kao, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO 2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO 2 gate dielectric is observed for the PBS and PBTI of the HfO 2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO 2 LTPS-TFT.

原文English
頁(從 - 到)1153-1160
頁數8
期刊IEEE Transactions on Electron Devices
55
發行號5
DOIs
出版狀態Published - 1 五月 2008

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