Reliability issues affecting MOS and bipolar ICs are reviewed. Hot-carrier-induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and burn-in optimization.
|出版狀態||Published - 1 十二月 1989|
|事件||Proceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors - Cambridge, MA, USA|
持續時間: 2 十月 1989 → 4 十月 1989
|Conference||Proceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors|
|城市||Cambridge, MA, USA|
|期間||2/10/89 → 4/10/89|