Reliability issues of MOS and bipolar ICs

Chen-Ming Hu*

*Corresponding author for this work

研究成果: Paper同行評審

8 引文 斯高帕斯(Scopus)

摘要

Reliability issues affecting MOS and bipolar ICs are reviewed. Hot-carrier-induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and burn-in optimization.

原文English
頁面438-442
頁數5
出版狀態Published - 1 十二月 1989
事件Proceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors - Cambridge, MA, USA
持續時間: 2 十月 19894 十月 1989

Conference

ConferenceProceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors
城市Cambridge, MA, USA
期間2/10/894/10/89

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