Reliability improvement in GaN HEMT power device using a field plate approach

Wen Hao Wu, Yueh Chin Lin, Ping Chieh Chin, Chia Chieh Hsu, Jin Hwa Lee, Shih Chien Liu, Jer shen Maa, Hiroshi Iwai, Edward Yi Chang, Heng-Tung Hsu*

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

原文English
頁(從 - 到)64-69
頁數6
期刊Solid-State Electronics
133
DOIs
出版狀態Published - 1 七月 2017

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