Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond

Ming H. Yu, J. H. Li, H. H. Lin, C. H. Chen, K. C. Ku, C. F. Nieh, H. Hisa, Y. M. Sheu, C. W. Tsai, Y. L. Wang, H. Y. Chu, Huang-Chung Cheng, T. L. Lee, S. C. Chen, M. S. Liang

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

The interaction of epitaxially strained SiGe and super annealing or millisecond anneal in high performance PFET fabrication was, for the first time, systematically investigated. When super annealing was applied, the quality of SiGe/Si interface, affected by subsequent ion implantation and post-SiGe thermal treatment, played an important role in SiGe strain relaxation incurring channel stress loss and defect injection to Si substrate resulting in high junction leakage. Defect injection mechanism was proposed to explain the defect formation in Si substrate. The new processing scheme, which preserved SiGe as relaxation-free and avoided defect injection, was developed and for 32nm technology. The device performance gain with 10% Id,sat increment resulting from fully strained SiGe was achieved.

原文English
主出版物標題2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
出版狀態Published - 1 十二月 2006
事件2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
持續時間: 10 十二月 200613 十二月 2006

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
國家United States
城市San Francisco, CA
期間10/12/0613/12/06

指紋 深入研究「Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond」主題。共同形成了獨特的指紋。

  • 引用此

    Yu, M. H., Li, J. H., Lin, H. H., Chen, C. H., Ku, K. C., Nieh, C. F., Hisa, H., Sheu, Y. M., Tsai, C. W., Wang, Y. L., Chu, H. Y., Cheng, H-C., Lee, T. L., Chen, S. C., & Liang, M. S. (2006). Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond. 於 2006 International Electron Devices Meeting Technical Digest, IEDM [4154354] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346919