Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Cheng-Huang Kuo*, Li Chuan Chang, Hsiu Mei Chou

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.

原文English
頁(從 - 到)H961-H964
頁數4
期刊Journal of the Electrochemical Society
158
發行號10
DOIs
出版狀態Published - 31 八月 2011

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