Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

K. Ohmori*, W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Yamada

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Reduction of low-frequency noise in Si MOSFETs by using nanowire channel」主題。共同形成了獨特的指紋。

Engineering & Materials Science